Ebers-Moll Model

A large‑signal equivalent‑circuit model of a bipolar junction transistor (BJT) that represents the transistor’s emitter–base and collector–base junctions as coupled diode currents and controlled current sources using exponential diode laws and transport factors (α_F, α_R); the model captures DC and low‑frequency large‑signal behavior, including forward and reverse active and saturation regions, bu